unisonic technologies co., ltd 2sb772 pnp silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2011 unisonic technologies co., ltd qw-r213-016,f medium power low voltage transistor ? description the utc 2sb772 is a medium power low voltage transistor, designed for audio power amplifier, dc-dc converter and voltage regulator. ? features * high current output up to 3a * low saturati on voltage * complement to 2sd882 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 2sb772l-x-t60-k 2sb772g-x-t60-k to-126 e c b bulk 2sb772l-x-t6c-k 2sb772g-x-t6c-k to-126c e c b bulk 2sb772l-x-tm3-t 2sb772g-x-tm3-t to-251 b c e tube 2sb772l-x-tn3-r 2sb772g-x-tn3-r to-252 b c e tape reel 2sb772l-x-tn3-t 2sb772g-x-tn3-t to-252 b c e tube 2sb772l-x-t9n-b 2sb772g-x-t9n-b to-92nl e c b tape box 2sb772l-x-t9n-k 2sb772g-x-t9n-k to-92nl e c b bulk 2sb772l-x-t9n-r 2SB772G-X-T9N-R to-92nl e c b tape reel
2sb772 pnp silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r213-016,f ? absolute maximum ratings (t a = 25 ) parameter symbol ratings unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v collector current dc i c -3 a pulse i cp -7 a base current i b -0.6 a collector dissipation to-92nl p c 0.5 w to-126/to-126c 1 to-251/to-252 1 junction temperature t j +150 storage temperature t stg -55 ~ +150 notes: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol rating unit junction to case to-126/ to-126c jc 12.5 c/w to-251/ to-252 12.5 to-92nl 25 ? electrical characteristics (t a = 25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =-100 a, i e =0 -40 v collector-emitter breakdown voltage bv ceo i c =-1ma, i b =0 -30 v emitter-base breakdown voltage bv ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-30v ,i e =0 -1000 na collector cut-off current i ceo v ce =-30v ,i b =0 -1000 na emitter cut-off current i ebo v eb =-3v, i c =0 -1000 na dc current gain (note 1) h fe1 v ce =-2v, i c =-20ma 30 200 h fe2 v ce =-2v, i c =-1a 100 150 400 collector-emitter satu ration voltage v ce ( sat ) i c =-2a, i b =-0.2a -0.3 -0.5 v base-emitter satura tion voltage v be ( sat ) i c =-2a, i b =-0.2a -1.0 -2.0 v current gain bandwidth product f t v ce =-5v, i c =-0.1a 80 mhz output capacitance c ob v cb =-10v, i e =0,f=1mhz 45 pf note 1: pulse test: p w <300 s, duty cycle<2% ? classification of h fe2 rank q p e range 100 ~ 200 160 ~ 320 200 ~ 400
2sb772 pnp silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r213-016,f typical characterics static characteristics -collector-emitter voltage (v) -collector current, ic (a) 04 812 1620 0 0.4 0.8 1.2 1.6 case temperature, tc ( ) -i b =1ma -i b =2ma -i b =3ma -i b =4ma -i b =5ma -i b =6ma -i b =7ma -i b =8ma -i b =9ma derating curve of safe operating areas - ic derating (%) 200 150 100 50 0 -50 0 50 100 150 s / b l i m i t e d d i s s i p a t i o n l i m i t e d case temperature, tc ( ) 200 150 100 50 0 -50 power derating power dissipation(w) 0 4 8 12 collector output capacitance -collector-base voltage(v) output capacitance(pf) 10 0 10 -1 10 -2 10 -3 10 1 10 2 10 3 10 0 i e =0 f=1mhz current gain- bandwidth product current gain- bandwidth product, f t (mhz) 10 1 10 2 10 3 10 0 v ce =5v collector-emitter voltage -collector current, ic (a) safe operating area ic(max),dc ic(max),pulse 1 0 m s 1 m s 0.1ms collector current, ic (a) 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 10 0 10 1 10 2 i b =8ma i b =8ma
2sb772 pnp silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r213-016,f typical characterics(cont.) dc current gain -collector current, ic (ma) - collector current, ic (ma) saturation voltage dc current gain, h fe 10 1 10 2 10 3 10 0 -saturation voltage (mv) v ce =-2v v ce(sat) v be(sat) 10 0 10 1 10 2 10 3 10 4 10 0 10 1 10 2 10 3 10 4 10 0 10 1 10 2 10 3 10 4 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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